features low cost diffused junction low forward voltage drop low reverse leakage current high current capability the plastic material carries ul recognition 94v-0 mechanical data case: jedec do-27 molded plastic polarity: color band denotes cathode weight: 0.04 ounces , 1.1grams mounting position: any dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave ,60hz, resistive or inductive load. for capacitive load, derate current by 20% 1n 1n 1n 1n 1n 1n 1n 1n 1n 5400 5401 5402 5403 5404 5405 5406 5407 5408 maximum recurrent peak reverse voltage v rrm 50 100 200 300 400 500 600 800 1000 v maximum rms voltage v rms 35 70 140 210 280 350 420 560 700 v maximum dc blocking voltage v dc 50 100 200 300 400 500 600 800 1000 v maximum average forward rectified current @t a =55 peak forward surge current 8.3ms single half sine-wave supe imposed on rated load(jedec method) maximum forward voltage at 3.0a dc v f v maximum dc reverse current @t j =25 at rated dc blocking voltage @t j =100 typical junction capacitance (note1) c j pf typical thermal resistance (note2) r ja /w operating temperature range t j storage temperature range t stg ~ 15 ~ 200 i fsm symbol characteristics i r 5.0 ua 35 50 plastic silicon rectifiers reverse voltage - 50 to 1000 volts forward current - 3.0 amperes i (av) a unit 1n5400 thru 1n5408 1.2 50 3.0 a 15 -55 to +125 -55 to +150 notes:1.measured at 1.0 mhz and applied reverse voltage of 4.0v dc 2.thermal resistance junction of ambient. do- 27 dia. dia. 210 .375(9.5) .335(8.5) .052(1.3) .048(1.2) .220(5.6) .197(5.0) 1.0(25.4) 1.0(25.4) mi mi
rating and charactertic curves 1n5400 thru 1n5408 ~ 16 ~ fig. 1 C forward current derating curve ambient temperature ( ) a v e r a g e f o r w a r d c u r r e n t ( a m p e r e s ) 1.0 0.5 0 25 3.0 1.5 2.0 2.5 50 125 100 75 150 175 single phase half wave 60hz resistive or inductive load number of cycles at 60hz fig. 2 C maximum non-repetitive surge current p e a k f o r w a r d s u r g e c u r r e n t ( a m p e r e s ) 1 150 100 50 0 200 2 5 10 20 50 100 pulse width 8.3 ms single half-sine-wave (jedec method) fig.3 C typical junction capacitance c a p a c i t a n c e , ( p f ) reverse voltage,volts 1 100 10 1 4 10 100 1n5400 to 1N5405 1n5406 to 1n5408 t j = 25 c f = 1 mhz fig.4-typical forward characteristics i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) instantaneous forward voltage,volts 0 1.0 10 0.1 100 0.2 0.4 0.6 0.8 1.2 1.6 1.4 1.0 1.8 t j = 25 c pulse width 300us
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